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41.
Here we propose and analyze a mathematical model that aims to describe the marble sulphation process occurring in a given material. The model accounts for rugosity as well as for damaging effects. This model is characterized by some technical difficulties that seem hard to overcome from a theoretical viewpoint. Therefore, we introduce some physically reasonable modifications in order to establish the existence of a suitable notion of solution on a given time interval. Numerical simulations are presented and discussed, also in view of further research.  相似文献   
42.
求解代数方程组是计算代数几何的最基本问题之一,孤立奇异解的计算则是其中最具挑战性的课题之一,在科学与工程计算中有着广泛的应用,如机器人、计算机视觉、机器学习、人工智能、运筹学、密码学和控制论等.本文结合作者的研究成果,综述了符号数值方法在计算代数系统孤立奇异解、特别是近似奇异解精化与验证方面的研究进展,并对未来的研究方向提出了展望.  相似文献   
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High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5?μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1?Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As compounds is restricted by either the minimum operating wavelength of ~8?μm in case of pseudomorphic AlGaAs-based quantum cascade lasers or requires utilization of thick metamorphic InxAl1-xAs buffer layers (MBLs) playing a key role in reducing the density of threading dislocations (TDs) in an active region, which otherwise result in a strong decay of the quantum efficiency of such mid-IR emitters. In this review we present the results of careful investigations of employing the convex-graded InxAl1-xAs MBLs for fabrication by molecular beam epitaxy on GaAs (001) substrates of In(Ga,Al)As heterostructures with a combined type-II/type-I InSb/InAs/InGaAs quantum well (QW) for efficient mid-IR emitters (3–3.6?μm). The issues of strain relaxation, elastic stress balance, efficiency of radiative and non-radiative recombination at T?=?10–300?K are discussed in relation to molecular beam epitaxy (MBE) growth conditions and designs of the structures. A wide complex of techniques including in-situ reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning and transmission electron microscopies, X-ray diffractometry, reciprocal space mapping, selective area electron diffraction, as well as photoluminescence (PL) and Fourier-transformed infrared spectroscopy was used to study in detail structural and optical properties of the metamorphic QW structures. Optimization of the growth conditions (the substrate temperature, the As4/III ratio) and elastic strain profiles governed by variation of an inverse step in the In content profile between the MBL and the InAlAs virtual substrate results in decrease in the TD density (down to 3?×?107 cm?2), increase of the thickness of the low-TD-density near-surface MBL region to 250–300?nm, the extremely low surface roughness with the RMS value of 1.6–2.4?nm, measured by AFM, as well as rather high 3.5?μm-PL intensity at temperatures up to 300?K in such structures. The obtained results indicate that the metamorphic InSb/In(Ga,Al)As QW heterostructures of proper design, grown under the optimum MBE conditions, are very promising for fabricating the efficient mid-IR emitters on a GaAs platform.  相似文献   
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王春姣  王秀红 《化学教育》2019,40(13):16-22
以1978年改革开放以来人民教育出版社出版的5套高中化学教科书作为研究对象,梳理其物质结构内容的演变,发现近40年来高中化学教科书中物质结构内容选择呈钟摆现象,同时其内容组织的结构化理念日益清晰。此外,为新时期我国高中化学教科书的编写提供了一些建议。  相似文献   
49.
Along with the rapid development of industry, VOCs gradually move into the spotlight, and now become a kind of harmful environmental pollutants that cannot be overlooked. This paper introduces the hazards of VOCs and the common catalytic combustion catalysts, noble metal catalysts and non-noble metal catalysts, for the elimination of VOCs. Perovskite catalysts, as one of the non-noble catalysts, play an important role in the field of catalytic combustion in recent years. According to the classification of elements doping in perovskites, the research achievements in the past five years were analyzed and reviewed. In addition, this paper also analyzes and elaborates the reaction kinetics and QSAR/QSPR models for the introduction of structural properties and reaction mechanisms.  相似文献   
50.
This review article covers the growth and characterization of two-dimensional (2D) crystals of transition metal chalcogenides, h-BN, graphene, etc. The chemical vapor transport method for bulk single crystal growth is discussed in detail. Top-down methods like mechanical and liquid exfoliation and bottom-up methods like chemical vapor deposition and molecular beam epitaxy for mono/few-layer growth are described. The optimal characterization techniques such as optical, atomic force, scanning electron, and Raman spectroscopy for identification of mono/few-layer(s) of the 2D crystals are discussed. In addition, a survey was done for the application of 2D crystals for both creation and deterministic transfer of single-photon sources and photovoltaic systems. Finally, the application of plasmonic nanoantenna was proposed for enhanced solar-to-electrical energy conversion and faster/brighter quantum communication devices.  相似文献   
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